TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

BC558C

Obsolete

ON Semiconductor

BJT TO92 30V 100MA PNP 0.5W 150C

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Discrete Semiconductor Products

BC558C

Obsolete

ON Semiconductor

BJT TO92 30V 100MA PNP 0.5W 150C

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC558C

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	420
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

BC558C Series

General Purpose Transistor PNP

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature
ON Semiconductor BC558CZL1G	-55 °C	150 °C	Through Hole	100 nA	100 mA	360 MHz	30 V	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	TO-226	420	PNP	650 mV	625 mW
ON Semiconductor BC558_J35Z			Through Hole	15 nA	100 mA	150 MHz	30 V	TO-226-3 TO-92-3	TO-92-3		110	PNP	650 mV	500 mW	150 °C
ON Semiconductor BC558BTA			Through Hole	15 nA	100 mA	150 MHz	30 V	TO-226-3 TO-92-3	TO-92-3		200	PNP	650 mV	500 mW	150 °C
ON Semiconductor BC558CBU			Through Hole	15 nA	100 mA	150 MHz	30 V	TO-226-3 TO-92-3	TO-92-3		420	PNP	650 mV	500 mW	150 °C
ON Semiconductor BC558C			Through Hole	15 nA	100 mA	150 MHz	30 V	TO-226-3 TO-92-3	TO-92-3		420	PNP	650 mV	500 mW	150 °C
ON Semiconductor BC558_D81Z			Through Hole	15 nA	100 mA	150 MHz	30 V	TO-226-3 TO-92-3	TO-92-3		110	PNP	650 mV	500 mW	150 °C
ON Semiconductor BC558BTAR			Through Hole	15 nA	100 mA	150 MHz	30 V	TO-226-3 TO-92-3	TO-92-3		200	PNP	650 mV	500 mW	150 °C
ON Semiconductor BC558BRL1	-55 °C	150 °C	Through Hole	100 nA	100 mA	360 MHz	30 V	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	TO-226		PNP	650 mV	625 mW
ON Semiconductor BC558B_J35Z			Through Hole	15 nA	100 mA	150 MHz	30 V	TO-226-3 TO-92-3	TO-92-3		200	PNP	650 mV	500 mW	150 °C
ON Semiconductor BC558C_J35Z			Through Hole	15 nA	100 mA	150 MHz	30 V	TO-226-3 TO-92-3	TO-92-3		420	PNP	650 mV	500 mW	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	4000	$ 0.02
		8000	$ 0.02
		12000	$ 0.02
		28000	$ 0.02
		100000	$ 0.01
		200000	$ 0.01
	Cut Tape (CT)	1	$ 0.13
		10	$ 0.12
		25	$ 0.11
		100	$ 0.06
		250	$ 0.05
		500	$ 0.04
		1000	$ 0.03

Description

General part information

BC558C Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources