SQJ204EP-T1_GE3

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MOSFET 2N-CH 12V 20A PPAK SO8

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MOSFET 2N-CH 12V 20A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ204EP-T1_GE3

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	60 A, 20 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs [x]	50 nC, 20 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3700 pF, 1400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max	48 W, 27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.3 mOhm, 3 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Supplier Device Package	Power - Max	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Grade	Configuration	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [x]	Qualification	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SQJ204EP-T1_GE3	-55 °C	175 ░C	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric	27 W 48 W	20 A 60 A	3 mOhm 8.3 mOhm	Automotive	2 N-Channel (Dual) Asymmetrical	MOSFET (Metal Oxide)	12 V	1.5 V	20 nC 50 nC	AEC-Q101	1400 pF 3700 pF

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General part information

Mosfet Array 12V 20A (Tc), 60A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric

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