SIA922EDJ-T4-GE3

Obsolete

MOSFET 2N-CH 30V 4.4A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 4.4A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA922EDJ-T4-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.5 A, 4.4 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	12 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Configuration	FET Feature	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIA922EDJ-T1-GE3	Surface Mount	12 nC	30 V	1.4 V	PowerPAK® SC-70-6 Dual	2 N-Channel (Dual)	Logic Level Gate	MOSFET (Metal Oxide)	PowerPAK® SC-70-6 Dual	4.5 A	7.8 W	-55 °C	150 °C	64 mOhm
Vishay General Semiconductor - Diodes Division SIA922EDJ-T4-GE3	Surface Mount	12 nC	30 V	1.4 V	PowerPAK® SC-70-6 Dual	2 N-Channel (Dual)		MOSFET (Metal Oxide)	PowerPAK® SC-70-6 Dual	4.4 A 4.5 A		-55 °C	150 °C	64 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 4.4A (Ta), 4.5A (Tc) 1.9W (Ta), 7.8W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources