Discrete Semiconductor Products

FFAF40U60DNTU

Obsolete

DIODE ARRAY GP 600V 40A TO3PF

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Discrete Semiconductor Products

Obsolete

DIODE ARRAY GP 600V 40A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	FFAF40U60DNTU

Current - Average Rectified (Io) (per Diode)	40 A
Current - Reverse Leakage @ Vr	20 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-3P-3 Full Pack
Reverse Recovery Time (trr)	110 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-3PF
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Diode Configuration	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Package / Case	Current - Reverse Leakage @ Vr
ON Semiconductor FFAF40U60DNTU	1 Pair Common Cathode	200 mA 500 ns	600 V	Through Hole	TO-3PF	2.1 V	Standard	110 ns	150 °C	-65 C	40 A	TO-3P-3 Full Pack	20 µA
ON Semiconductor FFAF40U60DNTU	1 Pair Common Cathode	200 mA 500 ns	600 V	Through Hole	TO-3PF	2.1 V	Standard	110 ns	150 °C	-65 C	40 A	TO-3P-3 Full Pack	20 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 600 V 40A Through Hole TO-3P-3 Full Pack

Technical documentation and resources