Specification	NTMTS001N06CLTXG

Current - Continuous Drain (Id) @ 25°C	398.2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds	12300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	5 W
Rds On (Max) @ Id, Vgs	0.81 mOhm
Supplier Device Package	8-DFNW
Supplier Device Package [x]	8.3
Supplier Device Package [y]	8.4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

NTMTS001N06CL Series

Single N-Channel Power MOSFET 60V, 328A, 0.81mΩ

Part	Vgs (Max)	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	FET Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
ON Semiconductor NTMTS001N06CTXG	20 V	8-PowerTDFN	5 W 244 W	8705 pF	-55 °C	175 ░C	113 nC	4 V	10 V	53.7 A 376 A	Surface Mount	MOSFET (Metal Oxide)	60 V	0.91 mOhm	8.3	8-DFNW	8.4	N-Channel
ON Semiconductor NTMTS001N06CLTXG	20 V	8-PowerTDFN		12300 pF	-55 °C	175 ░C			4.5 V 10 V	398.2 A	Surface Mount	MOSFET (Metal Oxide)	60 V	0.81 mOhm	8.3	8-DFNW	8.4	N-Channel	2.2 V	165 nC	5 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.92
		10	$ 4.13
		100	$ 3.34
		500	$ 2.97
		1000	$ 2.54
	Digi-Reel®	1	$ 4.92
		10	$ 4.13
		100	$ 3.34
		500	$ 2.97
		1000	$ 2.54
	Tape & Reel (TR)	3000	$ 2.39
Newark	Each (Supplied on Full Reel)	3000	$ 1.68
		6000	$ 1.57
		12000	$ 1.46
		18000	$ 1.40
		30000	$ 1.38
ON Semiconductor	N/A	1	$ 1.29

Description

General part information

NTMTS001N06CL Series

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.