Specification	TTC011B,Q

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-126N
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	230 V

TTC011B Series

Bipolar Transistors, NPN Bipolar Transistor, 230 V, 1 A, TO-126N

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Operating Temperature	Frequency - Transition	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage TTC011B,Q	230 V	TO-126N	1 A	Through Hole	1.5 V	TO-126-3 TO-225AA	1.5 W	100	NPN	150 °C	100 MHz	200 nA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN Bipolar Transistor, 230 V, 1 A, TO-126N

Technical documentation and resources