Discrete Semiconductor Products

CSD23201W10

Obsolete

MOSFET P-CH 12V 2.2A 4DSBGA

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 2.2A 4DSBGA

Technical Specifications

Parameters and characteristics for this part

Specification	CSD23201W10

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.4 nC
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-UFBGA, DSBGA
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	82 mOhm
Supplier Device Package	4-DSBGA (1x1)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-6 V
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Texas Instruments CSD23201W10	325 pF	-55 °C	150 °C	-6 V	1 W	1.5 V 4.5 V	2.4 nC	Surface Mount	82 mOhm	12 V	4-DSBGA (1x1)	P-Channel	4-UFBGA DSBGA	MOSFET (Metal Oxide)	2.2 A	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 2.2A (Tc) 1W (Ta) Surface Mount 4-DSBGA (1x1)

Technical documentation and resources