Discrete Semiconductor Products

SBYV28-100-E3/54

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DIODE GEN PURP 100V 3.5A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 3.5A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SBYV28-100-E3/54

Capacitance @ Vr, F	20 pF
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	20 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Technology	Mounting Type	Speed	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division SBYV28-150-E3/54	Standard	Through Hole	200 mA 500 ns	DO-201AD Axial	5 µA	150 °C	-55 °C	20 pF	DO-201AD	20 ns	1.1 V
Vishay General Semiconductor - Diodes Division SBYV28-100-E3/54	Standard	Through Hole	200 mA 500 ns	DO-201AD Axial	5 µA	150 °C	-55 °C	20 pF	DO-201AD	20 ns	1.1 V	100 V
Vishay General Semiconductor - Diodes Division SBYV28-100-E3/73	Standard	Through Hole	200 mA 500 ns	DO-201AD Axial	5 µA	150 °C	-55 °C	20 pF	DO-201AD	20 ns	1.1 V	100 V

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General part information

Diode 100 V 3.5A Through Hole DO-201AD

Technical documentation and resources