Specification	NVTYS010N06CLTWG

Current - Continuous Drain (Id) @ 25°C	51 A, 13 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	3.1 W, 47 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	9.8 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NVTYS010N06CL Series

MOSFET – Power, Single, N-Channel, 60 V, 9.8 mΩ, 51 A

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Qualification	Technology	Supplier Device Package	Mounting Type	Grade	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)
ON Semiconductor NVTYS010N06CLTWG	4.5 V 10 V	2 V	60 V	13 nC	910 pF	13 A 51 A	20 V	9.8 mOhm	AEC-Q101	MOSFET (Metal Oxide)	8-LFPAK	Surface Mount	Automotive	N-Channel	-55 °C	175 ░C	8-LFPAK56 SOT-1205	3.1 W 47 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 60 V, 9.8 mΩ, 51 A

Technical documentation and resources