Specification	RHRD660S9A-F085

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-252AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

RHRD660S9A Series

Hyperfast Diode, 600 V, 6 A, 2.1 V, DPAK

Part	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Voltage - Forward (Vf) (Max) @ If	Grade	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Mounting Type	Speed
ON Semiconductor RHRD660S9A-F085	Standard	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	AEC-Q101	2.1 V	Automotive	35 ns	175 ░C	-55 C	TO-252AA	100 µA	6 A	Surface Mount	200 mA 500 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

RHRD660S9A Series

The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics (trr< 30ns). It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.This device is intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.Formerly developmental type TA49057.