Discrete Semiconductor Products
RGE80TS65DGC13
NRNDRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 40A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGE80TS65DGC13
NRNDRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 40A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | RGE80TS65DGC13 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 63 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 85 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 200 W |
| Reverse Recovery Time (trr) | 183 ns |
| Supplier Device Package | TO-247GE |
| Switching Energy | 780 µJ, 1.09 mJ |
| Td (on/off) @ 25°C [custom] | 49 ns |
| Td (on/off) @ 25°C [custom] | 131 ns |
| Test Condition | 400 V, 10 Ohm, 15 V, 40 A |
| Vce(on) (Max) @ Vge, Ic | 2.05 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGE80TS65DG Series
RGE80TS65DG is IGBT featuring low switching loss and low conduction loss. It is ideal for Power Conditioner and Welder and General Inverter and UPS
Documents
Technical documentation and resources