BUK7S0R7-40HJ

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MOSFET N-CH 40V 425A LFPAK88

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Discrete Semiconductor Products

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MOSFET N-CH 40V 425A LFPAK88

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7S0R7-40HJ

Current - Continuous Drain (Id) @ 25°C	425 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	202 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	15719 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1235
Power Dissipation (Max) [Max]	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.7 mOhm
Supplier Device Package	LFPAK88 (SOT1235)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	3.6 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Grade	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology
Freescale Semiconductor - NXP BUK7S0R7-40HJ	15719 pF	0.7 mOhm	20 V	-10 V	LFPAK88 (SOT1235)	425 A	Automotive	AEC-Q101	10 V	3.6 V	N-Channel	40 V	375 W	-55 °C	175 ░C	Surface Mount	SOT-1235	202 nC	MOSFET (Metal Oxide)
Freescale Semiconductor - NXP BUK7S0R9-40HJ	12888 pF	0.9 mOhm	20 V	-10 V	LFPAK88 (SOT1235)	375 A	Automotive	AEC-Q101	10 V	3.6 V	N-Channel	40 V	375 W	-55 °C	175 ░C	Surface Mount	SOT-1235	166 nC	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 425A (Tc) 375W (Tc) Surface Mount LFPAK88 (SOT1235)

Technical documentation and resources