Discrete Semiconductor Products

RGS60TS65DHRC11

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8ΜS SHORT-CIRCUIT TOLERANCE, 650V 30A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE

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Discrete Semiconductor Products

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8ΜS SHORT-CIRCUIT TOLERANCE, 650V 30A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	RGS60TS65DHRC11

Current - Collector (Ic) (Max) [Max]	56 A
Current - Collector Pulsed (Icm)	90 A
Gate Charge	36 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	223 W
Reverse Recovery Time (trr)	103 ns
Supplier Device Package	TO-247N
Switching Energy	810 µJ, 660 µJ
Td (on/off) @ 25°C [custom]	28 ns
Td (on/off) @ 25°C [custom]	104 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

8µs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Switching Energy	Operating Temperature [Max]	Operating Temperature [Min]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	IGBT Type	Test Condition	Supplier Device Package	Package / Case	Power - Max [Max]	Reverse Recovery Time (trr)	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor RGS60TS65DHRC11	660 µJ 810 µJ	175 °C	-40 °C	28 ns	104 ns	Through Hole	56 A	90 A	2.1 V	Trench Field Stop	10 Ohm 15 V 30 A 400 V	TO-247N	TO-247-3	223 W	103 ns	36 nC	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Technical documentation and resources