Specification	CPH6635-TL-H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	400 mA, 1.5 A
Drain to Source Voltage (Vdss)	20 V, 30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.58 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	3.7 Ohm
Supplier Device Package	6-CPH
Technology	MOSFET (Metal Oxide)

CPH6636R Series

Dual N-Channel Common Drain Power MOSFET, 24V, 6A, 20mΩ

Part	Rds On (Max) @ Id, Vgs	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor CPH6635-TL-H	3.7 Ohm	N and P-Channel	Logic Level Gate	20 V 30 V	Surface Mount	150 °C	1.58 nC	SOT-23-6 Thin TSOT-23-6	6-CPH	MOSFET (Metal Oxide)	1.5 A 400 mA	800 mW
ON Semiconductor CPH6636R-TL-W	20 mOhm	2 N-Channel (Dual) Common Drain	Logic Level Gate	24 V	Surface Mount	150 °C		SOT-23-6 Thin TSOT-23-6	6-CPH	MOSFET (Metal Oxide)	6 A	900 mW	2.5 V	3 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

CPH6635 is Power MOSFET 30V 0.4A 3.7Ohm -20V -1.5A 280mOhm Complementary Dual CPH6