Discrete Semiconductor Products

NVBG160N120SC1

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SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 19.5 A, 1.2 KV, 0.16 OHM, TO-263HV (D2PAK)

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Discrete Semiconductor Products

Active

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 19.5 A, 1.2 KV, 0.16 OHM, TO-263HV (D2PAK)

Technical Specifications

Parameters and characteristics for this part

Specification	NVBG160N120SC1

Current - Continuous Drain (Id) @ 25°C	19.5 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	678 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	224 mOhm
Supplier Device Package	D2PAK-7
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-15 V
Vgs(th) (Max) @ Id	4.3 V

Part	Mounting Type	Grade	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	FET Type
ON Semiconductor NVBG160N120SC1	Surface Mount	Automotive	19.5 A	224 mOhm	678 pF	1200 V	4.3 V	D2PAK-7	136 W	33.8 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	-15 V	25 V	-55 °C	175 ░C	AEC-Q101	N-Channel

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General part information

N-Channel 1200 V 19.5A (Tc) 136W (Tc) Surface Mount D2PAK-7

Technical documentation and resources