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Technical Specifications
Parameters and characteristics for this part
| Specification | EMX5T2R |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 50 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 56 |
| Frequency - Transition | 3.2 GHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-666, SOT-563 |
| Supplier Device Package | EMT6 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 11 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.92 | |
| Digi-Reel® | 1 | $ 0.92 | ||
| Tape & Reel (TR) | 8000 | $ 0.20 | ||
| 16000 | $ 0.18 | |||
| 24000 | $ 0.18 | |||
| 40000 | $ 0.18 | |||
Description
General part information
EMX5T2 Series
Bipolar (BJT) Transistor Array 2 NPN (Dual) 11V 50mA 3.2GHz 150mW Surface Mount EMT6
Documents
Technical documentation and resources
No documents available