Discrete Semiconductor Products

JAN1N6630U

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DIODE GEN PURP 900V 1.4A D-5B

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Discrete Semiconductor Products

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DIODE GEN PURP 900V 1.4A D-5B

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N6630U

Current - Average Rectified (Io)	1.4 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SQ-MELF, E
Qualification	MIL-PRF-19500/590
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	D-5B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	900 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.4 V

Part	Current - Reverse Leakage @ Vr	Grade	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Technology	Reverse Recovery Time (trr)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Qualification	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Microsemi Corporation JANTX1N6630U	2 µA	Military	SQ-MELF E	1.4 V	200 mA 500 ns	Standard	50 ns	Surface Mount	900 V	D-5B	MIL-PRF-19500/590	1.4 A	150 °C	-65 C
Microsemi Corporation JAN1N6630U	2 µA	Military	SQ-MELF E	1.4 V	200 mA 500 ns	Standard	50 ns	Surface Mount	900 V	D-5B	MIL-PRF-19500/590	1.4 A	150 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 900 V 1.4A Surface Mount D-5B

Technical documentation and resources