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MCT03N06-TP
Discrete Semiconductor Products

FZT955-TP

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MCT03N06-TP
Discrete Semiconductor Products

FZT955-TP

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFZT955-TP
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
Frequency - Transition30 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]800 mW
Supplier Device PackageSOT-223
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic650 mV
Voltage - Collector Emitter Breakdown (Max)140 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 2500$ 0.32

Description

General part information

FZT955 Series

Bipolar (BJT) Transistor PNP 140 V 4 A 30MHz 800 mW Surface Mount SOT-223

Documents

Technical documentation and resources