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INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

FCPF1300N80ZYD

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 4 A, 1.3 Ω, TO-220F

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INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

FCPF1300N80ZYD

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 4 A, 1.3 Ω, TO-220F

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCPF1300N80ZYD
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
Input Capacitance (Ciss) (Max) @ Vds880 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Formed Leads
Power Dissipation (Max)24 W
Rds On (Max) @ Id, Vgs1.3 Ohm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 281$ 1.07

Description

General part information

FCPF1300N80Z Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

Documents

Technical documentation and resources