Discrete Semiconductor Products

AOW2500

Active

MOSFET N-CH 150V 11.5/152A TO262

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 150V 11.5/152A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW2500

Current - Continuous Drain (Id) @ 25°C	152 A, 11.5 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	136 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	2.1 W, 375 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Alpha & Omega Semiconductor Inc. AOW2500	2.1 W 375 W	150 V	Through Hole	6 V 10 V	3.5 V	N-Channel	20 V	11.5 A 152 A	I2PAK TO-262-3 Long Leads TO-262AA	TO-262	6460 pF	6.2 mOhm	MOSFET (Metal Oxide)	136 nC	175 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly