Discrete Semiconductor Products

EMH2FHAT2R

NRND

RF TRANSISTOR, AEC-Q101, NPN, 47K/47K

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Discrete Semiconductor Products

NRND

RF TRANSISTOR, AEC-Q101, NPN, 47K/47K

Technical Specifications

Parameters and characteristics for this part

Specification	EMH2FHAT2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	68
Frequency - Transition	250 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Qualification	AEC-Q101
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	EMT6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Qualification	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Transistor Type
Rohm Semiconductor EMH2FHAT2R	47000 Ohms	47 kOhms	Automotive	50 V	Surface Mount	500 nA	68	SOT-563 SOT-666	100 mA	AEC-Q101	EMT6	300 mV	250 MHz	2 NPN - Pre-Biased (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Technical documentation and resources