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GBU25H08-M3/P
Discrete Semiconductor Products

GBU25H08-M3/P

Active
Vishay General Semiconductor - Diodes Division

SLGPP 800V IN GBU PACKAGE. INDUS

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GBU25H08-M3/P
Discrete Semiconductor Products

GBU25H08-M3/P

Active
Vishay General Semiconductor - Diodes Division

SLGPP 800V IN GBU PACKAGE. INDUS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGBU25H08-M3/P
Current - Average Rectified (Io)4.5 A
Current - Reverse Leakage @ Vr10 µA
Diode TypeSingle Phase
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case4-SIP, GBU
Supplier Device PackageGBU
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If1.05 V
Voltage - Peak Reverse (Max) [Max]800 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.34
20$ 1.95
100$ 1.55
500$ 1.31
1000$ 1.11
2000$ 1.06
5000$ 1.02
10000$ 0.98

Description

General part information

GBU25 Series

Bridge Rectifier Single Phase Standard 800 V Through Hole GBU

Documents

Technical documentation and resources