Discrete Semiconductor Products

PSMN004-60B,118

LTB

MOSFET N-CH 60V 75A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN004-60B,118

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	168 nC
Input Capacitance (Ciss) (Max) @ Vds	8300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PSMN004-60B,118	Surface Mount	75 A	168 nC	3.6 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	230 W	20 V	60 V	D2PAK	MOSFET (Metal Oxide)	10 V	N-Channel	-55 °C	175 ░C	8300 pF

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General part information

N-Channel 60 V 75A (Tc) 230W (Tc) Surface Mount D2PAK

Technical documentation and resources