Discrete Semiconductor Products

IXFX170N20P

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Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFX170N20P

Active

Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

Deep-Dive with AI

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX170N20P

Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	185 nC
Input Capacitance (Ciss) (Max) @ Vds	11400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1250 W
Rds On (Max) @ Id, Vgs [Max]	14 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

IXFX170N20P Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXFX170N20T	10 V	200 V	1150 W	Through Hole	19600 pF	PLUS247™-3	5 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	11 mOhm	265 nC	TO-247-3 Variant	N-Channel
Littelfuse/Commercial Vehicle Products IXFX170N20P	10 V	200 V	1250 W	Through Hole	11400 pF	PLUS247™-3		20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C			TO-247-3 Variant	N-Channel	14 mOhm	185 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 16.95
Newark	Each	250	$ 15.71

Description

General part information

IXFX170N20P Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources