Discrete Semiconductor Products

KSE801STU

Obsolete

TRANS NPN DARL 60V 4A TO126-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 60V 4A TO126-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSE801STU

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	TO-126-3
Vce Saturation (Max) @ Ib, Ic [Max]	2.8 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Operating Temperature	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic [Max]
ON Semiconductor KSE802STU	150 °C	Through Hole	TO-126-3	750	TO-126-3 TO-225AA	100 µA	2.5 V	4 A	40 W	80 V
ON Semiconductor KSE800S	150 °C	Through Hole	TO-126-3	750	TO-126-3 TO-225AA	100 µA	2.5 V	4 A	40 W		60 V
ON Semiconductor KSE800STSSTU	150 °C	Through Hole	TO-126-3	750	TO-126-3 TO-225AA	100 µA	2.5 V	4 A	40 W		60 V
ON Semiconductor KSE801STU	150 °C	Through Hole	TO-126-3	750	TO-126-3 TO-225AA	100 µA		4 A	40 W		60 V	2.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126-3

Technical documentation and resources