Discrete Semiconductor Products

AOD603A

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MOSFET N/P-CH 60V 3.5A TO252-4L

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Discrete Semiconductor Products

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MOSFET N/P-CH 60V 3.5A TO252-4L

Technical Specifications

Parameters and characteristics for this part

Specification	AOD603A

Configuration	N and P-Channel, Common Drain
Current - Continuous Drain (Id) @ 25°C	3 A, 3.5 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252AD, DPAK (4 Leads + Tab), TO-252-5, TO-252-5, DPAK (4 Leads + Tab)
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-252-4L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]
Alpha & Omega Semiconductor Inc. AOD603A	DPAK (4 Leads + Tab) TO-252-5 TO-252-5 DPAK (4 Leads + Tab) TO-252AD	N and P-Channel Common Drain	175 °C	-55 °C	10 nC	MOSFET (Metal Oxide)	3 V	Logic Level Gate	540 pF	60 V	Surface Mount	TO-252-4L	60 mOhm	3 A 3.5 A	2 W

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