Specification	FDB9406-F085

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	138 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	176 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDB9406L_F085 Series

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.5 mΩ

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Grade	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDB9406L-F085	TO-263 (D2PAK)	1.5 mOhm	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	4.5 V 10 V	Automotive	40 V	170 nC	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	110 A	3 V	176 W	AEC-Q101	8600 pF	Surface Mount
ON Semiconductor FDB9406-F085	TO-263 (D2PAK)	1.8 mOhm	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	10 V	Automotive	40 V		N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	110 A	4 V	176 W	AEC-Q101	7710 pF	Surface Mount	138 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Logic Level PowerTrench®MOSFET, 40 V, 110 A, 1.5 mΩ

Technical documentation and resources