Discrete Semiconductor Products
DMN3401LDW-7
ActiveDiodes Inc
30V 800MA 400MΩ@10V,0.8A 290MW 1.6V 2 N-CHANNEL SOT-363-6 MOSFETS ROHS
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Discrete Semiconductor Products
DMN3401LDW-7
ActiveDiodes Inc
30V 800MA 400MΩ@10V,0.8A 290MW 1.6V 2 N-CHANNEL SOT-363-6 MOSFETS ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3401LDW-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 800 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 290 mW |
| Rds On (Max) @ Id, Vgs | 400 mOhm |
| Supplier Device Package | SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMN3401LDW Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources
