Discrete Semiconductor Products

SQA410EJ-T1_GE3

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MOSFET N-CH 20V 7.8A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET N-CH 20V 7.8A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SQA410EJ-T1_GE3

Current - Continuous Drain (Id) @ 25°C	7.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	485 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max) [Max]	13.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	28 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.1 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Grade	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SQA410EJ-T1_GE3	8 V	-55 °C	175 ░C	PowerPAK® SC-70-6	1.1 V	20 V	Surface Mount	7.8 A	AEC-Q101	485 pF	PowerPAK® SC-70-6 Single	13.6 W	28 mOhm	N-Channel	MOSFET (Metal Oxide)	1.8 V 4.5 V	Automotive	8 nC

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General part information

N-Channel 20 V 7.8A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Technical documentation and resources