Discrete Semiconductor Products

MMDT5451-7-F

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SMALL SIGNAL BIPOLAR TRANSISTOR, 0.2A I(C), 160V V(BR)CEO, 2-ELEMENT, NPN AND PNP, SILICON, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6

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Discrete Semiconductor Products

Active

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.2A I(C), 160V V(BR)CEO, 2-ELEMENT, NPN AND PNP, SILICON, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6

Technical Specifications

Parameters and characteristics for this part

Specification	MMDT5451-7-F

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80, 60
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Supplier Device Package	SOT-363
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	200 mV, 500 mV

Part	Frequency - Transition	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type
Diodes Inc MMDT5451-7-F	300 MHz	200 mW	Surface Mount	200 mV 500 mV	50 nA	200 mA	6-TSSOP SC-88 SOT-363	60 80	SOT-363	-55 °C	150 °C	1 NPN 1 PNP
Diodes Inc MMDT5451-7	300 MHz	200 mW	Surface Mount	200 mV 500 mV	50 nA	200 mA	6-TSSOP SC-88 SOT-363	60 80	SOT-363	-55 °C	150 °C	1 NPN 1 PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The MMDT5451-7-F is a NPN-PNP complementary small signal Bipolar Transistor Array ideal for medium power amplification and switching applications.

Technical documentation and resources