Specification	CSD18534KCS

Current - Continuous Drain (Id) @ 25°C	45 A, 100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1880 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	107 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

CSD18534Q5A Series

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.8 mOhm

Part	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD18534KCS	9.5 mOhm	MOSFET (Metal Oxide)	107 W	24 nC	2.3 V	4.5 V 10 V	N-Channel	TO-220-3	20 V	60 V	1880 pF	Through Hole	45 A 100 A	TO-220-3	-55 °C	175 ░C
Texas Instruments CSD18534Q5A	9.8 mOhm	MOSFET (Metal Oxide)	3.1 W 77 W	22 nC	2.3 V	4.5 V 10 V	N-Channel	8-PowerTDFN	20 V	60 V	1770 pF	Surface Mount	13 A 50 A	8-VSONP (5x6)	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources