Discrete Semiconductor Products

RJK03M3DPA-00#J5A

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NCH POWER MOSFET 30V 40A 3.9MOHM POWER SON-8 5X6

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Discrete Semiconductor Products

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NCH POWER MOSFET 30V 40A 3.9MOHM POWER SON-8 5X6

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M3DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.7 nC
Input Capacitance (Ciss) (Max) @ Vds	3010 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Power Dissipation (Max)	35 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 30V 40A 3.9mohm Power SON-8 5x6

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Technology	Operating Temperature	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK03M3DPA-00#J5A	3010 pF	4.5 V 10 V	8-WPAK	N-Channel	MOSFET (Metal Oxide)	150 °C	8-WFDFN Exposed Pad	15.7 nC	35 W	40 A	30 V	Surface Mount	20 V	3.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5710	$ 2.50

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources