Discrete Semiconductor Products

KSP92BU

Active

TRANSISTOR,BJT,PNP,300V V(BR)CEO,500MA I(C),TO-92 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

TRANSISTOR,BJT,PNP,300V V(BR)CEO,500MA I(C),TO-92 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	KSP92BU

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	250 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

PNP Epitaxial Silicon Transistor

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Frequency - Transition	Mounting Type	Power - Max [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor KSP92BU	TO-226-3 TO-92-3	500 mA	250 nA	500 mV	PNP	TO-92-3	50 MHz	Through Hole	625 mW	150 °C	25	300 V
ON Semiconductor KSP92BU	TO-226-3 TO-92-3	500 mA	250 nA	500 mV	PNP	TO-92-3	50 MHz	Through Hole	625 mW	150 °C	25	300 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources