VQ3001P-E3

Obsolete

MOSFET 2N/2P-CH 30V 0.85A

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Discrete Semiconductor Products

Obsolete

MOSFET 2N/2P-CH 30V 0.85A

Technical Specifications

Parameters and characteristics for this part

Specification	VQ3001P-E3

Configuration	2 Wide
Current - Continuous Drain (Id) @ 25°C	600 mA, 850 mA
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	150 pF, 110 pF
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Configuration	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division VQ3001P-E3	2.5 V	110 pF 150 pF	1 Ohm	2 Wide	MOSFET (Metal Oxide)	600 mA 850 mA	30 V	2 W	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 850mA, 600mA 2W

Technical documentation and resources

No documents available