Specification	RN2306,LXHF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-323, SC-70
Power - Max [Max]	100 mW
Qualification	AEC-Q101
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Resistors Included	R1, R2
Supplier Device Package	SC-70
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN2306 Series

Part	Qualification	Frequency - Transition	Resistors Included	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Package / Case	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type	Resistor - Base (R1)
Toshiba Semiconductor and Storage RN2306,LXHF	AEC-Q101	200 MHz	R1 R2	100 mW	50 V	SC-70	80	Automotive	100 mA	300 mV	47 kOhms	SC-70 SOT-323	PNP - Pre-Biased	500 nA	Surface Mount	4.7 kOhms
Toshiba Semiconductor and Storage RN2306,LF		200 MHz		100 mW	50 V	SC-70	80		100 mA	300 mV	47 kOhms	SC-70 SOT-323	PNP - Pre-Biased	500 nA	Surface Mount	4.7 kOhms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

Technical documentation and resources