
Optoelectronics
VSMY98545DS
ObsoleteVishay General Semiconductor - Diodes Division
EMITTER IR 850NM 1A 2SMD
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Optoelectronics
VSMY98545DS
ObsoleteVishay General Semiconductor - Diodes Division
EMITTER IR 850NM 1A 2SMD
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VSMY98545DS |
|---|---|
| Current - DC Forward (If) (Max) | 1 A |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 110 °C |
| Operating Temperature [Min] | -40 °C |
| Orientation | Top View |
| Package / Case | 2-SMD, No Lead Exposed Pad |
| Radiant Intensity (Ie) Min @ If [Min] | 300 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle [custom] | 90 ° |
| Voltage - Forward (Vf) (Typ) | 3.2 V |
| Wavelength | 850 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MY98545 Series
Infrared (IR) Emitter 850nm 3.2V 1A 300mW/sr @ 1A 90° 2-SMD, No Lead Exposed Pad
Documents
Technical documentation and resources
No documents available