Discrete Semiconductor Products

NTMFD6H840NLT1G

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DUAL N-CHANNEL POWER MOSFET 80V, 74A, 6.9MΩ

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Discrete Semiconductor Products

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DUAL N-CHANNEL POWER MOSFET 80V, 74A, 6.9MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFD6H840NLT1G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	14 A, 74 A
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds	2022 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	3.1 W, 90 W
Rds On (Max) @ Id, Vgs	6.9 mOhm
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Dual N-Channel Power MOSFET 80V, 74A, 6.9mΩ

Part	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power - Max	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTMFD6H846NLT1G	MOSFET (Metal Oxide)	8-PowerTDFN	9.4 A 31 A	Surface Mount	80 V	15 mOhm	17 nC	2 V	3.2 W 34 W	2 N-Channel (Dual)	8-DFN (5x6) Dual Flag (SO8FL-Dual)	-55 °C	175 ░C
ON Semiconductor NTMFD6H840NLT1G	MOSFET (Metal Oxide)	8-PowerTDFN	14 A 74 A	Surface Mount	80 V			2 V	3.1 W 90 W	2 N-Channel (Dual)	8-DFN (5x6) Dual Flag (SO8FL-Dual)	-55 °C	175 ░C	2022 pF	6.9 mOhm	32 nC

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General part information

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.