Discrete Semiconductor Products

SQ1563AEH-T1_GE3

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MOSFET N/P-CH 20V 0.85A SC70-6

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Discrete Semiconductor Products

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MOSFET N/P-CH 20V 0.85A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SQ1563AEH-T1_GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	850 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	1.25 nC
Gate Charge (Qg) (Max) @ Vgs	1.33 nC
Input Capacitance (Ciss) (Max) @ Vds	89 pF, 84 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	280 mOhm, 575 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Configuration	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case
Vishay General Semiconductor - Diodes Division SQ1563AEH-T1_GE3	280 mOhm 575 mOhm	1.5 W	Surface Mount	MOSFET (Metal Oxide)	850 mA	1.5 V	N and P-Channel	1.25 nC	1.33 nC	PowerPAK® SC-70-6 Dual	84 pF 89 pF	-55 °C	175 ░C	20 V	PowerPAK® SC-70-6 Dual

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General part information

Mosfet Array 20V 850mA (Tc) 1.5W Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources