Discrete Semiconductor Products

VBO36-16NO8

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BRIDGE RECT 3P 1.6KV 30A FO-B

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Discrete Semiconductor Products

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BRIDGE RECT 3P 1.6KV 30A FO-B

Technical Specifications

Parameters and characteristics for this part

Specification	VBO36-16NO8

Current - Average Rectified (Io)	30 A, 18 A
Current - Reverse Leakage @ Vr	300 µA
Diode Type	Three Phase
Mounting Type	QC Terminal
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-Square, FO-B
Supplier Device Package	FO-B
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V
Voltage - Peak Reverse (Max)	1.6 kV

Bipolar Module - Diode FO

Part	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Voltage - Peak Reverse (Max)	Diode Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology
LITTELFUSE VBO36-16NO8	18 A 30 A	FO-B	4-Square FO-B	1.6 kV	Three Phase	300 µA	1.7 V	-40 °C	150 °C	QC Terminal	Standard
LITTELFUSE VBO36-14NO8	18 A 30 A	FO-B	4-Square FO-B	1.4 kV	Three Phase	300 µA	1.7 V	-40 °C	150 °C	QC Terminal	Standard
LITTELFUSE VBO36-18NO8	18 A 30 A	FO-B	4-Square FO-B	1.8 kV	Single Phase	40 µA	1.14 V	-40 °C	150 °C	QC Terminal	Standard
LITTELFUSE VBO36-12NO8	18 A 30 A	FO-B	4-Square FO-B	1.2 kV	Three Phase	300 µA	1.7 V	-40 °C	150 °C	QC Terminal	Standard
LITTELFUSE VBO36-08NO8	18 A 30 A	FO-B	4-Square FO-B	800 V	Single Phase	300 µA	1.7 V	-40 °C	150 °C	QC Terminal	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes in various packages made for main rectification in 1 phase bridge configurations.