Specification	HUF75852G3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	480 nC
Input Capacitance (Ciss) (Max) @ Vds	7690 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75852G3 Series

N-Channel UltraFET Power MOSFET 150V, 75A, 16mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
ON Semiconductor HUF75852G3	10 V	MOSFET (Metal Oxide)	150 V	Through Hole	20 V	TO-247-3	4 V	N-Channel	16 mOhm	75 A	TO-247-3	480 nC	7690 pF	-55 °C	175 ░C	500 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 13.69
		10	$ 9.61
		100	$ 7.29
		500	$ 7.15
Newark	Each	250	$ 8.01
		500	$ 7.79
ON Semiconductor	N/A	1	$ 7.63

General part information

N-Channel UltraFET Power MOSFET 150 V, 75 A, 16 mΩ

Technical documentation and resources