Discrete Semiconductor Products

VS-FC420SA10

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MOSFET N-CH 100V 435A SOT227

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 435A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-FC420SA10

Current - Continuous Drain (Id) @ 25°C	435 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	375 nC
Input Capacitance (Ciss) (Max) @ Vds	17300 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	652 W
Rds On (Max) @ Id, Vgs	2.15 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division VS-FC420SA15	SOT-227-4 miniBLOC	909 W	-55 °C	175 ░C	Chassis Mount	13700 pF	5.4 V	2.75 mOhm	150 V	10 V	N-Channel	MOSFET (Metal Oxide)	400 A	20 V	SOT-227
Vishay General Semiconductor - Diodes Division VS-FC420SA10	SOT-227-4 miniBLOC	652 W	-55 °C	175 ░C	Chassis Mount	17300 pF	3.8 V	2.15 mOhm	100 V	10 V	N-Channel	MOSFET (Metal Oxide)	435 A	20 V	SOT-227	375 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 435A (Tc) 652W (Tc) Chassis Mount SOT-227

Technical documentation and resources