Discrete Semiconductor Products

MMBTA44_R1_00001

Active

Panjit International Inc.

400V 225MW 50@10MA,10V 300MA NPN SOT-23 BIPOLAR (BJT) ROHS

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

Panjit International Inc.

400V 225MW 50@10MA,10V 300MA NPN SOT-23 BIPOLAR (BJT) ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	MMBTA44_R1_00001

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	225 mW
Supplier Device Package	SOT-23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Supplier Device Package	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition
Panjit International Inc. MMBTA44_R1_00001	SOT-23	NPN	-55 °C	150 °C	50 hFE	225 mW	100 nA	Surface Mount	750 mV	SC-59 SOT-23-3 TO-236-3	300 mA	400 V	50 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 300 mA 50MHz 225 mW Surface Mount SOT-23

Technical documentation and resources