Discrete Semiconductor Products

MCPF05N80-BP

Obsolete

MOSFET N-CH 800V 5A TO220F

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 5A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	MCPF05N80-BP

Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	667 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	25 W
Rds On (Max) @ Id, Vgs	2.8 Ohm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	FET Type	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case
Micro Commercial Components MCPF05N80-BP	MOSFET (Metal Oxide)	4 V	25 W	N-Channel	TO-220F	Through Hole	667 pF	800 V	10 V	27 nC	-55 °C	150 °C	2.8 Ohm	30 V	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 5A (Tj) 25W Through Hole TO-220F

Technical documentation and resources