Discrete Semiconductor Products

SI8416DB-T2-E1

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MOSFET N-CH 8V 16A 6MICRO FOOT

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Discrete Semiconductor Products

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MOSFET N-CH 8V 16A 6MICRO FOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8416DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFBGA
Power Dissipation (Max)	13 W, 2.77 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	6-Micro Foot™ (1.5x1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	800 mV

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI8416DB-T2-E1	1470 pF	Surface Mount	8 V	-55 °C	150 °C	800 mV	N-Channel	6-UFBGA	1.2 V 4.5 V	2.77 W 13 W	5 V	6-Micro Foot™ (1.5x1)	23 mOhm	MOSFET (Metal Oxide)	26 nC	16 A

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General part information

N-Channel 8 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Technical documentation and resources