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TO-236AB
Discrete Semiconductor Products

PBHV8540T,215

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 500 V, 0.5 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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TO-236AB
Discrete Semiconductor Products

PBHV8540T,215

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 500 V, 0.5 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8540T,215
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]10
Frequency - Transition30 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Supplier Device PackageTO-236AB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.43
10$ 0.33
100$ 0.20
500$ 0.19
1000$ 0.13
Digi-Reel® 1$ 0.43
10$ 0.33
100$ 0.20
500$ 0.19
1000$ 0.13
N/A 0$ 0.73
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
9000$ 0.10
30000$ 0.10
75000$ 0.09
MouserN/A 1$ 0.57
10$ 0.36
100$ 0.17
1000$ 0.15
3000$ 0.11
9000$ 0.11
24000$ 0.10
45000$ 0.09

Description

General part information

PBHV8540 Series

NPN high-voltage low VCEsattransistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.