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Discrete Semiconductor Products

IXFX32N80P

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Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFX32N80P

Active

Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX32N80P

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	8800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IXFX32N80Q3 Series

DiscMSFT NChHiPerFET-Q3 Class TO-247AD

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Littelfuse/Commercial Vehicle Products IXFX32N100P	225 nC	-55 °C	150 °C	1000 V	MOSFET (Metal Oxide)	10 V	30 V	14200 pF	960 W	Through Hole	PLUS247™-3	6.5 V	320 mOhm	N-Channel	TO-247-3 Variant	32 A
Littelfuse/Commercial Vehicle Products IXFX32N90P	215 nC	-55 °C	150 °C	900 V	MOSFET (Metal Oxide)	10 V	30 V	10600 pF	960 W	Through Hole	PLUS247™-3	6.5 V		N-Channel	TO-247-3 Variant	32 A	300 mOhm
Littelfuse/Commercial Vehicle Products IXFX32N80Q3	140 nC	-55 °C	150 °C	800 V	MOSFET (Metal Oxide)	10 V	30 V			Through Hole	PLUS247™-3	6.5 V	270 mOhm	N-Channel	TO-247-3 Variant	32 A		6940 pF	1000 W
Littelfuse/Commercial Vehicle Products IXFX32N80P		-55 °C	150 °C	800 V	MOSFET (Metal Oxide)	10 V	30 V	8800 pF		Through Hole	PLUS247™-3	5 V	270 mOhm	N-Channel	TO-247-3 Variant	32 A			830 W	150 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 11.91
Newark	Each	250	$ 10.73
		500	$ 9.97

Description

General part information

IXFX32N80Q3 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Documents

Technical documentation and resources