Discrete Semiconductor Products

BST82,235

NRND

MOSFET N-CH 100V 190MA TO236AB

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Discrete Semiconductor Products

NRND

MOSFET N-CH 100V 190MA TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BST82,235

Current - Continuous Drain (Id) @ 25°C	190 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	40 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	830 mW
Rds On (Max) @ Id, Vgs	10 Ohm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Package / Case	Operating Temperature	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP BST82,235	Surface Mount	SC-59 SOT-23-3 TO-236-3	150 °C	2 V	MOSFET (Metal Oxide)	830 mW	TO-236AB	20 V	100 V	10 Ohm	40 pF	N-Channel	190 mA	5 V

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General part information

N-Channel 100 V 190mA (Ta) 830mW (Tc) Surface Mount TO-236AB

Technical documentation and resources