Discrete Semiconductor Products

SI4916DY-T1-E3

Obsolete

MOSFET 2N-CH 30V 10A/10.5A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 10A/10.5A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4916DY-T1-E3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	10 A, 10.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI4916DY-T1-E3	8-SOIC	3.9 mm	0.154 in	3 V	2 N-Channel (Half Bridge)	8-SOIC	10 nC	30 V	18 mOhm	MOSFET (Metal Oxide)	10 A 10.5 A	Surface Mount	Logic Level Gate	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI4916DY-T1-GE3	8-SOIC	3.9 mm	0.154 in	3 V	2 N-Channel (Half Bridge)	8-SOIC	10 nC	30 V	18 mOhm	MOSFET (Metal Oxide)	10 A 10.5 A	Surface Mount	Logic Level Gate	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SOIC

Technical documentation and resources