Discrete Semiconductor Products

BIDW20N60T

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TRANSISTOR, IGBT, 600V/40A/192W/TO-247 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

TRANSISTOR, IGBT, 600V/40A/192W/TO-247 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BIDW20N60T

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	52 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	192 W
Reverse Recovery Time (trr)	33.7 ns
Supplier Device Package	TO-247
Switching Energy	1 mJ, 300 µJ
Td (on/off) @ 25°C [custom]	48 ns
Td (on/off) @ 25°C [custom]	19 ns
Test Condition	20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Gate Charge	Switching Energy	Test Condition	IGBT Type
Bourns Inc. BIDW20N60T	2.4 V	TO-247	TO-247-3	Through Hole	600 V	40 A	150 °C	-55 °C	192 W	48 ns	19 ns	60 A	33.7 ns	52 nC	1 mJ 300 µJ	10 Ohm 15 V 20 A 400 V	Trench Field Stop

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 600 V 40 A 192 W Through Hole TO-247

Technical documentation and resources