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SOT 23-3
Discrete Semiconductor Products

NSVBCH817-40LT1G

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ON Semiconductor

+175°C T<SUB>J(MAX)</SUB> NPN BIPOLAR TRANSISTOR

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SOT 23-3
Discrete Semiconductor Products

NSVBCH817-40LT1G

Active
ON Semiconductor

+175°C T<SUB>J(MAX)</SUB> NPN BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVBCH817-40LT1G
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]250
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.31
10$ 0.19
100$ 0.12
500$ 0.09
1000$ 0.08
Digi-Reel® 1$ 0.31
10$ 0.19
100$ 0.12
500$ 0.09
1000$ 0.08
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06
9000$ 0.05
15000$ 0.05
21000$ 0.05
30000$ 0.05
75000$ 0.04
150000$ 0.04
NewarkEach 2500$ 0.05
10000$ 0.05
25000$ 0.04
ON SemiconductorN/A 1$ 0.04

Description

General part information

BCH817 Series

This PNP Bipolar Transistor, housed in the SOT-23 package, is designed for use in lower power surface mount applications where linear and switching functions are to be performed. With its +175°C TJ(MAX)rating, this device is suitable for high temperature, mission critical applications.